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BP103 - Silicon NPN Phototransistor

Key Features

  • Package: clear epoxy.
  • ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2).
  • Spectral range of sensitivity: (typ) 450 1100 nm.
  • Base connection.
  • High linearity Ordering Information  Type Photocurrent  VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm² IPCE BP 103 125 400 µA Only one bin within one packing unit (variation less than 2:1) Ordering Code Q62702P0075  1 Version 1.4 | 2018-05-08 BP 103   Maximum.

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Datasheet Details

Part number BP103
Manufacturer ams OSRAM
File Size 642.91 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet BP103 Datasheet

Full PDF Text Transcription for BP103 (Reference)

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Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 BP 103  BP 103 TO18 Silicon NPN Phototransistor Applications ——Electronic Equipment ——Industrial Automation (Machine contro...

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cations ——Electronic Equipment ——Industrial Automation (Machine controls, Light barriers, Vision controls) ——Measurement Levelling Features: ——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Base connection ——High linearity Ordering Information Type Photocurrent VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm² IPCE BP 103 125 ... 400 µA Only one bin within one packing unit (variation less than 2:1) Ordering Code Q62702P0075  1 Version 1.