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BP103 Datasheet NPN-silizium-fototransistor Silicon NPN Phototransistor

Manufacturer: Siemens Semiconductor Group (now Infineon)

Overview: BP 103 NPN-Silizium-Fototransistor Silicon NPN Phototransistor BP 103 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

General Description

Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature, ≥ 2 mm distance from case bottom t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature, ≥ 2 mm distance from case bottom t ≤ 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Emitter-Basisspannung Emitter -base voltage Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Va

Key Features

  • q Especially suitable for.

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