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BP103 - NPN-Silizium-Fototransistor Silicon NPN Phototransistor

General Description

Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature, ≥ 2 mm distance from case bottom t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron sold

Key Features

  • q Especially suitable for.

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BP 103 NPN-Silizium-Fototransistor Silicon NPN Phototransistor BP 103 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.