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BP103 - Silicon NPN Phototransistor

Key Features

  • Package: clear epoxy.
  • ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2).
  • Spectral range of sensitivity: (typ) 450 1100 nm.
  • Base connection.
  • High linearity Ordering Information  Type Photocurrent  VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm² IPCE BP 103 125 400 µA Only one bin within one packing unit (variation less than 2:1) Ordering Code Q62702P0075  1 Version 1.4 | 2018-05-08 BP 103   Maximum.

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Datasheet Details

Part number BP103
Manufacturer ams OSRAM
File Size 642.91 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet BP103 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 BP 103   BP 103 TO18 Silicon NPN Phototransistor Applications ——Electronic Equipment ——Industrial Automation (Machine controls, Light barriers, Vision controls) ——Measurement Levelling Features: ——Package: clear epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 450 ... 1100 nm ——Base connection ——High linearity Ordering Information  Type Photocurrent  VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm² IPCE BP 103 125 ... 400 µA Only one bin within one packing unit (variation less than 2:1) Ordering Code Q62702P0075  1 Version 1.