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BPX61 - Silicon NPN Phototransistor

Key Features

  • Suitable up to 125 °C.
  • Especially suitable for.

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Datasheet Details

Part number BPX61
Manufacturer ams OSRAM
File Size 383.50 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet BPX61 Datasheet

Full PDF Text Transcription for BPX61 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BPX61. For precise diagrams, and layout, please refer to the original PDF.

2015-12-23 Silicon PIN Photodiode Version 1.3 BPX 61 Features: • Suitable up to 125 °C • Especially suitable for applications from 400 nm to 1100 nm • Short switching tim...

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suitable for applications from 400 nm to 1100 nm • Short switching time (typ. 20 ns) • Hermetically sealed metal package (similar to TO-5) Applications • Industrial electronics • For control and drive circuits • Photointerrupters • IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment Ordering Information Type: BPX 61 Photocurrent Ordering Code IP [µA] Ev = 1000 lx, Std. Light A, VR =5V 70 (≥ 50) Q62705P0025 2015-12-23 1 Version 1.3 Maximum Ratings (TA = 25 °C) Parameter Operating and storage temperature range Reverse voltage Total Power dissipation ESD withstand voltage (acc.