BPX61 phototransistor equivalent, silicon npn phototransistor.
* Suitable up to 125 °C
* Especially suitable for applications from 400 nm to 1100 nm
* Short switching time (typ. 20 ns)
* Hermetically sealed metal pac.
from 400 nm to 1100 nm
* Short switching time (typ. 20 ns)
* Hermetically sealed metal package (similar to TO-5).
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