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FDC6333C - N- & P-Channel Power MOSFET

Description

These N & P Channel MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on

state resistance and yet maintain superior switching performance.

Features

  • Q1 2.5 A, 30 V.
  • RDS(on) = 95 mW @ VGS = 10 V.
  • RDS(on) = 150 mW @ VGS = 4.5 V.
  • Q2.
  • 2.0 A,.
  • 30 V.
  • RDS(on) = 130 mW @ VGS =.
  • 10 V.
  • RDS(on) = 220 mW @ VGS =.
  • 4.5 V.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • SUPERSOTt.
  • 6 Package: Small Footprint (72% Smaller than SO.
  • 8); Low Profile (1 mm Thick).
  • This is a Pb.
  • Free Device.

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Datasheet Details

Part number FDC6333C
Manufacturer onsemi
File Size 361.06 KB
Description N- & P-Channel Power MOSFET
Datasheet download datasheet FDC6333C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N & P-Channel, POWERTRENCH) 30 V FDC6333C General Description These N & P−Channel MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical. Features • Q1 2.5 A, 30 V ♦ RDS(on) = 95 mW @ VGS = 10 V ♦ RDS(on) = 150 mW @ VGS = 4.5 V • Q2 −2.0 A, −30 V ♦ RDS(on) = 130 mW @ VGS = −10 V ♦ RDS(on) = 220 mW @ VGS = −4.
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