FDC6333C - N- & P-Channel Power MOSFET

On Semiconductor

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Datasheet Details

Part number	FDC6333C
Manufacturer	ON Semiconductor ↗
File Size	361.06 KB
Description	N- & P-Channel Power MOSFET
Datasheet	FDC6333C-OnSemiconductor.pdf

FDC6333C Product details

Description

These N & P Channel MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on state resistance and yet maintain superior switching performance. 8 and TSSOP 8 packages are impractical.

Features

Q1 2.5 A, 30 V.
RDS(on) = 95 mW @ VGS = 10 V.
RDS(on) = 150 mW @ VGS = 4.5 V.
Q2.
2.0 A,.
30 V.
RDS(on) = 130 mW @ VGS =.
10 V.
RDS(on) = 220 mW @ VGS =.
4.5 V.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(on).
SUPERSOTt.
6 Package: Small Footprint (72% Smaller than SO.
8); Low Profile (1 mm Thick).
This is a Pb.
Free Device.

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Published: Mar 22, 2020 |