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FDMC6679AZ - P-Channel MOSFET

Description

switch applications.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.

Features

  • Max rDS(on) = 10 mW at VGS =.
  • 10 V, ID =.
  • 11.5 A.
  • Max rDS(on) = 18 mW at VGS =.
  • 4.5 V, ID =.
  • 8.5 A.
  • HBM ESD Protection Level of 8 kV Typical (Note 3).
  • Extended VGSS range (.
  • 25 V) for Battery.

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Datasheet preview – FDMC6679AZ

Datasheet Details

Part number FDMC6679AZ
Manufacturer ON Semiconductor
File Size 246.77 KB
Description P-Channel MOSFET
Datasheet download datasheet FDMC6679AZ Datasheet
Additional preview pages of the FDMC6679AZ datasheet.

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Full PDF Text Transcription

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MOSFET – P-Channel, POWERTRENCH) -30 V, -20 A, 10 mW FDMC6679AZ General Description The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection. Features • Max rDS(on) = 10 mW at VGS = −10 V, ID = −11.5 A • Max rDS(on) = 18 mW at VGS = −4.5 V, ID = −8.5 A • HBM ESD Protection Level of 8 kV Typical (Note 3) • Extended VGSS range (−25 V) for Battery Applications • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability • This Device is Pb−Free and Halide Free Applications • Load Switch in Notebook and Server • Notebook Battery Pack Power Management DATA SHEET www.onsemi.
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