Datasheet4U Logo Datasheet4U.com

FDMC6679AZ - N-Channel MOSFET

General Description

The FDMC6679AZ has been designed to minimize losses in load switch applications.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.

Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A Max rDS(on) = 18 mΩ at VGS =

Key Features

  • General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMC6679AZ P-Channel MOSFET On Semiconductor
FDMC6675BZ P-Channel MOSFET ON Semiconductor
FDMC6686P P-Channel MOSFET ON Semiconductor
FDMC6688P P-Channel MOSFET ON Semiconductor
FDMC6696P P-Channel Power MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDMC6675BZ N-Channel MOSFET
FDMC6686P MOSFET
FDMC6688P MOSFET
FDMC610P MOSFET
FDMC612PZ MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMC6679AZ P-Channel PowerTrench® MOSFET July 2009 FDMC6679AZ P-Channel PowerTrench® MOSFET -30 V, -20 A, 10 mΩ Features General Description The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection. „ Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A „ Max rDS(on) = 18 mΩ at VGS = -4.5 V, ID = -8.