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FDMC6679AZ Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDMC6679AZ P-Channel PowerTrench® MOSFET July 2009 FDMC6679AZ P-Channel PowerTrench® MOSFET -30 V, -20 A, 10.

General Description

The FDMC6679AZ has been designed to minimize losses in load switch applications.

Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) and ESD protection.

„ Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A „ Max rDS(on) = 18 mΩ at VGS = -4.5 V, ID = -8.5 A „ HBM ESD protection level of 8 kV typical(note 3) „ Extended VGSS range (-25 V) for battery applications „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ Termination is Lead-free and RoHS pliant Applications „ Load Switch in Notebook and Server „ Notebook Battery Pack Power Management Top Pin 1 S S S G Bottom D D D D D D D D 8 1 5 6 7 4 3 2 G S S S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted ..

Key Features

  • General.

FDMC6679AZ Distributor