Datasheet Summary
MOSFET
- P-Channel, POWERTRENCH)
-30 V, -20 A, 14.4 mW
Description The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been bined to offer the lowest RDS(on) and ESD protection.
Features
- Max RDS(on) = 14.4 mW at VGS =
- 10 V, ID =
- 9.5 A
- Max RDS(on) = 27.0 mW at VGS =
- 4.5 V, ID =
- 6.9 A
- HBM ESD Protection Level of 8 kV Typical (Note 3)
- Extended VGSS Range (- 25 V) for Battery Applications
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant
Typical...
