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FDMC6675BZ - P-Channel MOSFET

General Description

switch applications.

Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.

Key Features

  • Max RDS(on) = 14.4 mW at VGS =.
  • 10 V, ID =.
  • 9.5 A.
  • Max RDS(on) = 27.0 mW at VGS =.
  • 4.5 V, ID =.
  • 6.9 A.
  • HBM ESD Protection Level of 8 kV Typical (Note 3).
  • Extended VGSS Range (.
  • 25 V) for Battery.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, POWERTRENCH) -30 V, -20 A, 14.4 mW FDMC6675BZ Description The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection. Features • Max RDS(on) = 14.4 mW at VGS = −10 V, ID = −9.5 A • Max RDS(on) = 27.0 mW at VGS = −4.5 V, ID = −6.9 A • HBM ESD Protection Level of 8 kV Typical (Note 3) • Extended VGSS Range (−25 V) for Battery Applications • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Load Switch in Notebook and Server • Notebook Battery Pack Power Management DATA SHEET www.