Datasheet Summary
FDMC6675BZ P-Channel PowerTrench® MOSFET
P-Channel Power Trench® MOSFET
-30 V, -20 A, 14.4 mΩ
Features
- Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A
- Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A
- HBM ESD protection level of 8 kV typical(note 3)
- Extended VGSS range (-25 V) for battery applications
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- Termination is Lead-free and RoHS pliant
June 2009
General Description
The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) and...
