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FDMC8032L - Dual N-Channel MOSFET

Description

This device includes two 40 V N

Power 33 (3 mm x 3 mm MLP) package.

The package is enhanced for exceptional thermal performance.

Features

  • Max rDS(on) = 20 mW at VGS = 10 V, ID = 7 A.
  • Max rDS(on) = 27 mW at VGS = 4.5 V, ID = 6 A.
  • Low Inductance Packaging Shortens Rise/Fall Times.
  • Lower Switching Losses.
  • 100% Rg Tested.
  • This Device is Pb.
  • Free and is RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number FDMC8032L
Manufacturer onsemi
File Size 272.59 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDMC8032L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Dual N-Channel, POWERTRENCH) 40 V, 7 A, 20 mW FDMC8032L General Description This device includes two 40 V N−Channel MOSFETs in a dual Power 33 (3 mm x 3 mm MLP) package. The package is enhanced for exceptional thermal performance. Features • Max rDS(on) = 20 mW at VGS = 10 V, ID = 7 A • Max rDS(on) = 27 mW at VGS = 4.
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