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FDMC8032L Dual N-Channel PowerTrench® MOSFET
October 2013
FDMC8032L
Dual N-Channel PowerTrench® MOSFET
40 V, 7 A, 20 mΩ
Features
General Description
Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 27 mΩ at VGS = 4.5 V, ID = 6 A Low Inductance Packaging Shortens Rise/Fall Times Lower Switching Losses 100% Rg Tested Termination is Lead-free and RoHS Compliant
This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.