FDMC8032L Description
This device includes two 40 V N−Channel MOSFETs in a dual Power 33 (3 mm x 3 mm MLP) package. The package is enhanced for exceptional thermal performance.
FDMC8032L Key Features
- Max rDS(on) = 20 mW at VGS = 10 V, ID = 7 A
- Max rDS(on) = 27 mW at VGS = 4.5 V, ID = 6 A
- Low Inductance Packaging Shortens Rise/Fall Times
- Lower Switching Losses
- 100% Rg Tested
- This Device is Pb-Free and is RoHS pliant
FDMC8032L Applications
- Battery Protection