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FQP27P06 - P-Channel MOSFET

Description

This P

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Features

  • 27 A,.
  • 60 V, RDS(on) = 70 mW (Max. ) @ VGS =.
  • 10 V, ID =.
  • 13.5 A.
  • Low Gate Charge (Typ. 33 nC).
  • Low Crss (Typ. 120 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Temperature Rating GDS TO.
  • 220.
  • 3LD CASE 340AT.

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Datasheet Details

Part number FQP27P06
Manufacturer onsemi
File Size 297.47 KB
Description P-Channel MOSFET
Datasheet download datasheet FQP27P06 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com MOSFET – P-Channel, QFET -60 V, -27 A, 70 mW FQP27P06 VDSS −60 V RDS(on) MAX 70 mW @ −10 V ID MAX −27 A Description This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • −27 A, − 60 V, RDS(on) = 70 mW (Max.) @ VGS = −10 V, ID = −13.5 A • Low Gate Charge (Typ. 33 nC) • Low Crss (Typ.
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