FQP27P06 - P-Channel MOSFET

On Semiconductor

FQP27P06 Datasheet Preview — Preview of FQP27P06 PDF

Datasheet Details

Part number	FQP27P06
Manufacturer	ON Semiconductor ↗
File Size	297.47 KB
Description	P-Channel MOSFET
Datasheet	FQP27P06-OnSemiconductor.pdf

FQP27P06 Product details

Description

This P Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.This advanced MOSFET technology has been especially tailored to reduce on state resistance, and to provide superior switching performance and high avalanche energy strength.

Features

27 A,.
60 V, RDS(on) = 70 mW (Max. ) @ VGS =.
10 V, ID =.
13.5 A.
Low Gate Charge (Typ. 33 nC).
Low Crss (Typ. 120 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating GDS TO.
220.
3LD CASE 340AT.

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Published: Mar 22, 2020 |