FQP27P06 mosfet equivalent, p-channel mosfet.
* - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V, ID = - 13.5 A
* Low Gate Charge (Typ. 33 nC)
* Low Crss (Typ. 120 pF)
* 100% Avalanche Tested
Features
* - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V, ID = - 13.5 A
* Low Gate Charge (Typ. 33 nC).
This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switc.
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