FQP27P06 Datasheet 60v P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQP27P06 P-Channel QFET® MOSFET March 2013 FQP27P06 P-Channel QFET® MOSFET - 60 V, - 27 A, 70.

Datasheet Details

Part number	FQP27P06
Manufacturer	Fairchild (now onsemi)
File Size	415.31 KB
Description	60V P-Channel MOSFET
Datasheet	FQP27P06_FairchildSemiconductor.pdf

General Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Key Features

- 27 A, - 60 V, RDS(on) = 70 m (Max. ) @ VGS = - 10 V, ID = - 13.5 A.
Low Gate Charge (Typ. 33 nC).
Low Crss (Typ. 120 pF).
100% Avalanche Tested.
175C Maximum Junction Temperature Rating S  G D S TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Not.

FQP27P06 Distributor

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Brand Logo	Part Number	Description	Manufacturer
	FQP27P06	P-Channel MOSFET	On Semiconductor

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