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FQP27P06 Datasheet P-channel MOSFET

Manufacturer: onsemi

Overview: DATA SHEET www.onsemi.com MOSFET – P-Channel, QFET -60 V, -27 A, 70 mW FQP27P06 VDSS −60 V RDS(on) MAX 70 mW @ −10 V ID MAX −27.

General Description

This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Key Features

  • 27 A,.
  • 60 V, RDS(on) = 70 mW (Max. ) @ VGS =.
  • 10 V, ID =.
  • 13.5 A.
  • Low Gate Charge (Typ. 33 nC).
  • Low Crss (Typ. 120 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Temperature Rating GDS TO.
  • 220.
  • 3LD CASE 340AT.

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