| Part Number | FQP27P06 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This P−Channel enhancement mode power MOSFET is produced
using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state r.
* *27 A, * 60 V, RDS(on) = 70 mW (Max.) @ VGS = *10 V, ID = *13.5 A * Low Gate Charge (Typ. 33 nC) * Low Crss (Typ. 120 pF) * 100% Avalanche Tested * 175°C Maximum Junction Temperature Rating GDS TO *220 *3LD CASE 340AT MARKING DIAGRAM &Z&3&K FQP 27P06 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless oth. |
FQP27P06 Datasheet and Specifications PDF
The FQP27P06 is a P-Channel MOSFET.
| Part Number | FQP27P06 Datasheet |
|---|---|
| Description | 60V P-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to.
* - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V, ID = - 13.5 A * Low Gate Charge (Typ. 33 nC) * Low Crss (Typ. 120 pF) * 100% Avalanche Tested * 175C Maximum Junction Temperature Rating S G D S TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EA. |