* VDS, min@Tjmax
* ID, pulse
* RDS(ON), max @ VGS=10 V
* Qg 650 V 60 A 180 mΩ 23.3 nC
* Schemati.

OSG60R180xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications. .

OSG60R180FF

OSG60R180HF

OSG60R180IF

OSG60R180PF

OSG65R900

OSG65R900A

OSG65R900AF

OSG65R900D

OSG65R900DF

OSG65R900FF

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