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FQP8N60 Datasheet 8A N-Channel MOSFET

Manufacturer: OuCan

Datasheet Details

Part number FQP8N60
Manufacturer OuCan
File Size 462.30 KB
Description 8A N-Channel MOSFET
Datasheet download datasheet FQP8N60 Datasheet

General Description

Product Summary The FQP8N60 & FQPF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 700V@150℃ 8A < 0.9Ω TO-220 Top View TO-220F D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol FQP8N60 FQPF8N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 8 8* 6.2 6.2* 32 3.2 150 300 50 5 TC=25°C Power Dissipation B Derate above 25oC PD 208 1.67 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS FQP8N60 65 0.5 FQPF8N60 65 -- Maximum Junction-to-Case RθJC 0.6 2.5 * Drain current limited by maximum junction temperature.

Overview

FQP8N60/FQPF8N60 600V,8A N-Channel MOSFET General.