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FQPF8N50 Datasheet 9A N-Channel MOSFET

Manufacturer: OuCan

Download the FQPF8N50 datasheet PDF. This datasheet also includes the FQP8N50 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (FQP8N50-OuCan.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FQPF8N50
Manufacturer OuCan
File Size 296.49 KB
Description 9A N-Channel MOSFET
Download FQPF8N50 Download (PDF)

General Description

Product Summary The FQP8N50&FQPF8N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 600V@150℃ 9A < 0.85W D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol FQP8N50 FQPF8N50 Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 9 9* 6 6* 30 3.2 154 307 5 TC=25°C Power Dissipation B Derate above 25oC PD 192 38.5 1.5 0.3 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS FQP8N50 65 0.5 FQPF8N50 65 -- Maximum Junction-to-Case RqJC 0.65 * Drain current limited by maximum junction temperature.

Overview

FQP8N50/FQPF8N50 500V, 9A N-Channel MOSFET General.