Datasheet Summary
FQD15N10
100V N-Channel MOSFET
General Description
Product Summary
The FQP15N10 & FQPF15N10 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, tele, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
100% UIS Tested 100% Rg Tested
TO-220
Top View
TO-220F
100V 15A < 80mΩ < 75m...