FQD12N06 - 60V N-Channel MOSFET

General Description

The FQD12N06combine advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

Those devices are suitable for use in PWM, load switching and general purpose applications.

FQD12N06 60v n-channel mosfet by Oucan Semi - Datasheet Preview

Datasheet Details

Part number	FQD12N06
Manufacturer	Oucan Semi
File Size	298.17 KB
Description	60V N-Channel MOSFET
Datasheet	FQD12N06 Datasheet

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FQD12N06 60V N-Channel MOSFET General Description Product Summary The FQD12N06combine advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 60V 12A < 65mΩ < 85mΩ TO252 DPAK Bottom View D D G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.