FQD60N07 - 60V N-Channel MOSFET

General Description

The FQD60N07 used advanced trench technology to provide excellent RDS(ON) and low gate charge.

Those devices are suitable for use as a load switch or in PWM applications.

FQD60N07 60v n-channel mosfet by Oucan Semi - Datasheet Preview

Datasheet Details

Part number	FQD60N07
Manufacturer	Oucan Semi
File Size	435.29 KB
Description	60V N-Channel MOSFET
Datasheet	FQD60N07 Datasheet

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Full PDF Text Transcription (Reference)

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FQ D 60N07 60V N-Channel MOSFET General Description The FQD60N07 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 5V) 60V 60A < 18mΩ < 25mΩ 100% UIS Tested 100% Rg Tested Top View D TO252 DPAK Bottom View D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.