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FQD60N07 - 60V N-Channel MOSFET

Description

The FQD60N07 used advanced trench technology to provide excellent RDS(ON) and low gate charge.

Those devices are suitable for use as a load switch or in PWM applications.

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Datasheet Details

Part number FQD60N07
Manufacturer Oucan Semi
File Size 435.29 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet FQD60N07 Datasheet

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Full PDF Text Transcription

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FQ D 60N07 60V N-Channel MOSFET General Description The FQD60N07 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 5V) 60V 60A < 18mΩ < 25mΩ 100% UIS Tested 100% Rg Tested Top View D TO252 DPAK Bottom View D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.
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