FQD12N06 Description
Product Summary The FQD12N06bine advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications. Drain Current and Gate Voltage (Note E) Normalized On-Resistance ID(A) 20 VDS=5V 16 12 25°C 8 4 125°C 0 23456 VGS(Volts).