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FQPF4N60 Datasheet 4A N-Channel MOSFET

Manufacturer: Oucan Semi

Download the FQPF4N60 datasheet PDF. This datasheet also includes the FQP4N60 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (FQP4N60-OucanSemi.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FQPF4N60
Manufacturer Oucan Semi
File Size 281.30 KB
Description 4A N-Channel MOSFET
Download FQPF4N60 Download (PDF)

General Description

Product Summary The FQP4N60 & FQPF4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 700V@150℃ 4A < 2.2Ω TO-220 Top View TO-220F D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol FQP4N60 FQPF4N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 4 4* 2.7 2.7* 16 2.5 94 188 50 5 TC=25°C Power Dissipation B Derate above 25oC PD 104 0.83 35 0.28 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS FQP4N60 65 0.5 FQPF4N60 65 -- Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.

Overview

FQP4N60/FQPF4N60 600V,4A N-Channel MOSFET General.