Full PDF Text Transcription for PJA65P03 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
PJA65P03 . For precise diagrams, and layout, please refer to the original PDF.
PJA65P03 30V P-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE FEATURES • RDS(ON), VGS@-2.5V,ID@-1A<9 m • RDS(ON), VGS@-4.5V,ID@-4A<65 m • RDS(ON), VGS@-10V,ID@-4.2A<55 m • A...
View more extracted text
RDS(ON), VGS@-4.5V,ID@-4A<65 m • RDS(ON), VGS@-10V,ID@-4.2A<55 m • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Low Gate Charge • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free) 0.056(1.40) 0.047(1.20) 0.120(3.04) 0.110(2.80) 0.006(0.15)MIN. 30 Volts CURRENT 4 Amperes 0.079(2.00) 0.070(1.80) 0.008(0.20) 0.003(0.08) MECHANICAL DATA • Case: SOT-23 Package • Terminals : Solderable per MIL-STD-750,Method 2026 • Apporx. Weight : 0.0003 ounces, 0.0084grams • Marking : 6
More Datasheets from PanJit Semiconductor
Part Number
Description
PJA3415-AU
20V P-Channel Enhancement Mode MOSFET