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PJU1N60 - 600V N-Channel MOSFET

Key Features

  • 1A, 600V, RDS(ON)=11Ω@VGS=10V, ID=0.5A.
  • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives T O- 25 1 TO -2 5 1 G 1 D S3 2.

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PJU1N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 1A, 600V, RDS(ON)=11Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives T O- 25 1 TO -2 5 1 G 1 D S3 2 MECHANICAL DATA • Case: TO-220AB / TO-251 Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 INTE RNA L S CHE M ATIC DIA GRA M 2 Drain ORDERING INFORMATION TYPE PJU1N60 1 Gate MARKING U1N60 PACKAGE TO-251 PACKING 3 80PCS/TUBE S ource Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) http://www.DataSheet4U.