Download F10N65 Datasheet PDF
F10N65 page 2
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F10N65 Key Features

  • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A
  • Low ON Resistance
  • Fast Switching
  • Low Gate Charge
  • Fully Characterized Avalanche Voltage and Current
  • Specially Desigened for AC Adapter, Battery Charge and SMPS
  • In pliance with EU RoHs 2002/95/EC Directives
  • Case: TO-220AB / ITO-220AB Molded Plastic
  • Terminals : Solderable per MIL-STD-750,Method 2026
  • 55 to +150 750

F10N65 Description

PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET.