F10N60 - 600V N-Channel Enhancement Mode MOSFET

Datasheet Summary

10A , 600V, R DS(ON)=1.0Ω@VGS=10V, ID=5.0A.
Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D.

Pan Jit International

Part number	F10N60
Manufacturer	Pan Jit International
File Size	264.30 KB
Description	600V N-Channel Enhancement Mode MOSFET
Datasheet	F10N60 Datasheet
Additional preview pages of the F10N60 datasheet.

F10N60 - 10A 600V N-channel Enhancement Mode Power MOSFET (ROUM)
F10N12L - N-Channel Enhancement Mode Power Field Effect Transistor Chip (General Electric Solid State)
F10NK50Z - STF10NK50Z (STMicroelectronics)
F1000LC120 - Extra Fast Recovery Diode (IXYS)
F1001 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F100122 - 9-BIT BUFFER (National Semiconductor)
F100124 - Hex TTL-to-ECL Translator (National Semiconductor)
F100125 - Hex ECL-to-TTL Translator (National Semiconductor)
F100136 - 4-Stage Counter / Shift Register (National Semiconductor)
F100164 - 16 Input Multiplexer (Fairchild Semiconductor)

Other Datasheets by Pan Jit International

Click to expand full text

PJP10N60 / PJF10N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, R DS(ON)=1.0Ω@VGS=10V, ID=5.

Published: May 8, 2014 |