F10N65 Overview
PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET.
F10N65 Key Features
- 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A
- Low ON Resistance
- Fast Switching
- Low Gate Charge
- Fully Characterized Avalanche Voltage and Current
- Specially Desigened for AC Adapter, Battery Charge and SMPS
- In pliance with EU RoHs 2002/95/EC Directives
- Case: TO-220AB / ITO-220AB Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
- 55 to +150 750