F10N65 - 650V N-Channel Enhancement Mode MOSFET

Datasheet Summary

10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A TO-220AB / ITO-220AB TO-220AB.
Low ON Resistance.
Fast Switching.
Low Gate Charge.
Fully Characterized Avalanche Voltage and Current.
Specially Desigened for AC Adapter, Battery Charge and SMPS.
In compliance with EU RoHs 2002/95/EC Directives 3 2 S 1D G ITO-220AB 1 2 3 D S G.

Pan Jit International

Part number	F10N65
Manufacturer	Pan Jit International
File Size	230.07 KB
Description	650V N-Channel Enhancement Mode MOSFET
Datasheet	F10N65 Datasheet
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Other Datasheets by Pan Jit International

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PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.

Published: Feb 23, 2015 |