F10N65 Datasheet | PanJit Semiconductor

PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET Features - 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A TO-220AB / ITO-220AB TO-220AB - Low ON Resistance - Fast Switching - Low Gate Charge - Fully Characterized Avalanche Voltage and Current - Specially Desigened for AC Adapter, Battery Charge and SMPS - In pliance with EU RoHs 2002/95/EC Directives 3 2 1D ITO-220AB 3 D MECHANICAL DATA - Case: TO-220AB / ITO-220AB Molded Plastic - Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM 2 Drain ORDERING INFORMATION TYPE PJP10N65 MARKING P10N65 PJF10N65 PACKAGE TO-220AB ITO-220AB PACKING 50PCS/TUBE 50PCS/TUBE 1 Gate 3...