F10N65 - 650V N-Channel Enhancement Mode MOSFET

Product Overview

Pan Jit International

Part number	F10N65
Manufacturer	Pan Jit International
File Size	230.07 KB
Description	650V N-Channel Enhancement Mode MOSFET
Datasheet	F10N65 Datasheet
Additional preview pages of the F10N65 datasheet.

10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A TO-220AB / ITO-220AB TO-220AB.
Low ON Resistance.
Fast Switching.
Low Gate Charge.
Fully Characterized Avalanche Voltage and Current.
Specially Desigened for AC Adapter, Battery Charge and SMPS.
In compliance with EU RoHs 2002/95/EC Directives 3 2 S 1D G ITO-220AB 1 2 3 D S G.

📁 Similar Datasheet

F10N60 - 10A 600V N-channel Enhancement Mode Power MOSFET (ROUM)
F10N12L - N-Channel Enhancement Mode Power Field Effect Transistor Chip (General Electric Solid State)
F10NK50Z - STF10NK50Z (STMicroelectronics)
F1000LC120 - Extra Fast Recovery Diode (IXYS)
F1001 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F100122 - 9-BIT BUFFER (National Semiconductor)
F100124 - Hex TTL-to-ECL Translator (National Semiconductor)
F100125 - Hex ECL-to-TTL Translator (National Semiconductor)

Other Datasheets by Pan Jit International

Published: Feb 23, 2015 |