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F10N65 - 650V N-Channel Enhancement Mode MOSFET

Key Features

  • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A TO-220AB / ITO-220AB TO-220AB.
  • Low ON Resistance.
  • Fast Switching.
  • Low Gate Charge.
  • Fully Characterized Avalanche Voltage and Current.
  • Specially Desigened for AC Adapter, Battery Charge and SMPS.
  • In compliance with EU RoHs 2002/95/EC Directives 3 2 S 1D G ITO-220AB 1 2 3 D S G.

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Full PDF Text Transcription for F10N65 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for F10N65. For precise diagrams, and layout, please refer to the original PDF.

PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5....

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0V, ID=5.

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