PJ2306 Description
PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected.
PJ2306 Key Features
- RDS(ON), VGS@10V,IDS@3.2A=65mΩ
- RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ
- Advanced Trench Process Technology
- High Density Cell Design For Ultra Low On-Resistance
- Very Low Leakage Current In Off Condition
- Specially Designed for Load Switch, PWM