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PJ2301 - 20V P-Channel Enhancement Mode MOSFET

Key Features

  • R, DS(ON) VGS@-1.8V,ID@-1.5A=200mΩ.
  • RDS(ON), VGS@-4.5V,ID@-2.2A=105mΩ.
  • Advanced Trench Process Technology.
  • High Density Cell Design For Ultra Low On-Resistance.
  • Specially Designed for DC/DC converters.
  • Low gate charge.
  • Lead free in compliance with EU RoHS 2011/65/EU directive.
  • Green molding compound as per IEC61249 Std. . (Halogen Free).

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Full PDF Text Transcription (Reference)

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PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • R, DS(ON) VGS@-1.8V,ID@-1.5A=200mΩ • RDS(ON), VGS@-4.5V,ID@-2.2A=105mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC converters • Low gate charge • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA • Case : SOT-23 Package • Terminals : Solderable per MIL-STD-750,Method 2026 • Approx. Weight: 0.0003 ounces, 0.0084 grams • Marking : 01 0.120(3.04) 0.110(2.80) 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.070(1.80) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.013(0.35) 0.008(0.20) 0.003(0.08) 0.044(1.10) 0.035(0.90) 0.006(0.15)MIN.