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PJ2306 - 30V N-Channel MOSFET

Key Features

  • RDS(ON), VGS@10V,IDS@3.2A=65mΩ.
  • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ.
  • Advanced Trench Process Technology.
  • High Density Cell Design For Ultra Low On-Resistance.
  • Very Low Leakage Current In Off Condition.
  • Specially Designed for Load Switch, PWM.

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Other Datasheets by PanJit Semiconductor

Part Number Description
PJ2301 20V P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

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PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@3.2A=65mΩ • RDS(ON), VGS@4.5V,IDS@2.