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PJ2306 - 30V N-Channel MOSFET

Datasheet Summary

Features

  • RDS(ON), VGS@10V,IDS@3.2A=65mΩ.
  • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ.
  • Advanced Trench Process Technology.
  • High Density Cell Design For Ultra Low On-Resistance.
  • Very Low Leakage Current In Off Condition.
  • Specially Designed for Load Switch, PWM.

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Datasheet Details

Part number PJ2306
Manufacturer Pan Jit International
File Size 228.23 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet PJ2306 Datasheet
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Full PDF Text Transcription

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PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@3.2A=65mΩ • RDS(ON), VGS@4.5V,IDS@2.
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