PJ2306 Datasheet | PanJit Semiconductor

30V N-Channel Enhancement Mode MOSFET - ESD Protected Features - RDS(ON), VGS@10V,IDS@3.2A=65mΩ - RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - Very Low Leakage Current In Off Condition - Specially Designed for Load Switch, PWM Applications - ESD Protected - ponent are in pliance with EU RoHS 2002/95/EC directives MECHANICALDATA - Case: SOT-23 Package - Terminals : Solderable per MIL-STD-750,Method 2026 - Marking : 06 D 3 Top View 1 G 2 S Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D r a i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o...