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PJD10P10A - 100V P-Channel Enhancement Mode MOSFET

Key Features

  • RDS(ON), VGS@-10V,ID@-5A.

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Full PDF Text Transcription for PJD10P10A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PJD10P10A. For precise diagrams, and layout, please refer to the original PDF.

PPJD10P10A 100V P-Channel Enhancement Mode MOSFET Voltage -100 V Current -10 A Features  RDS(ON), VGS@-10V,ID@-5A<210mΩ  RDS(ON), VGS@-4.5V,ID@-3A<230mΩ  High switchin...

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GS@-10V,ID@-5A<210mΩ  RDS(ON), VGS@-4.5V,ID@-3A<230mΩ  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: TO-252 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0104 ounces, 0.

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