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PJL9812 - Dual N-Channel Enhancement Mode MOSFET

Key Features

  • RDS(ON) , VGS@10V, ID@6A.

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Full PDF Text Transcription for PJL9812 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PJL9812. For precise diagrams, and layout, please refer to the original PDF.

PPJL9812 30V Dual N-Channel Enhancement Mode MOSFET Voltage 30 V Current 6A SOP-8 Features  RDS(ON) , VGS@10V, ID@6A<35mΩ  RDS(ON) , VGS@4.5V, ID@4A<40mΩ  RDS(ON) , VG...

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, VGS@10V, ID@6A<35mΩ  RDS(ON) , VGS@4.5V, ID@4A<40mΩ  RDS(ON) , VGS@2.5V, ID@2A<54mΩ  Advanced Trench Process Technology  ESD Protected 2KV HBM  High density cell design for ultra low on-resistance  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOP-8 package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0029 ounces, 0.

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