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PJT7839 - P-Channel Enhancement Mode MOSFET

Key Features

  • RDS(ON) , VGS@-10V, ID@-500mA.

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Full PDF Text Transcription for PJT7839 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PJT7839. For precise diagrams, and layout, please refer to the original PDF.

PPJT7839 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -250mA Features  RDS(ON) , VGS@-10V, ID@-500mA<4Ω  RDS(ON) , VGS@-4.5V, ID@-200mA<6Ω  RDS(ON) , VG...

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@-10V, ID@-500mA<4Ω  RDS(ON) , VGS@-4.5V, ID@-200mA<6Ω  RDS(ON) , VGS@-2.5V, ID@-50mA<13Ω  Advanced Trench Process Technology  Specially Designed for Relay driver, Speed line drive, etc.  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-363 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0002 ounces, 0.

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