Transistor
2SA0720A (2SA720A)
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC1318A
I Features
G High collector to emitter voltage VCEO.
G Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
I Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–80
–70
–5
–1
– 0.5
625
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
I Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA*2
VCE = –10V, IC = –500mA*2
IC = –300mA, IB = –30mA*2
IC = –300mA, IB = –30mA*2
VCB = –10V, IE = 50mA, f = 100MHz
VCB = –10V, IE = 0, f = 1MHz
*1hFE1 Rank classification
Rank
Q
R
hFE1 85 ~ 170 120 ~ 240
min typ max Unit
– 0.1 µA
–80 V
–70 V
–5 V
85 240
40
– 0.2 – 0.6
V
– 0.85 –1.5
V
120 MHz
20 30 pF
*2 Pulse measurement
Note.) The Part number in the Parenthesis shows conventional part number.
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