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MIP531 - IPD
www.DataSheet.co.kr Realizing the simplification of power Supply and downsizing IPD for switching power supply (MIP531) Overview MIP531 supporting.C3311 - Silicon NPN Transistor
MaDinistecnoanntincuee/ d (planeMdaminatiennteannacnec/Deitsycpoen,timnuaeindteinncalnucdeestyfpoell,opwlianngefdoudrisPcroondtiuncutelidfetcyypceled,.D965 - Silicon NPN Transistor
Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope s Features q Low collector to emitter satura.AN17821A - BTL 5W x 2-Channel Power Amplifier
DATAaSnHceEe/EdT Part No. ten tinu Package Code No. MaDiniscon Maintenance/Discontinued ipnPlcallenuaedsdepesmmlAHavfanaoihsiSeilntnilttoNdtptIefweo:.MIP2F2 - Intelligent Power Device (IPD)
インテリジェントパワーデバイス (IPD) MIP2F20MS シリコン MOS のを のをに になを の, にえ, (フ の ) とを ( ほか ) ACアダプタ Ta = 25°C±3°C ドレイン VCC VDD フィード.UN4212 - Silicon NPN epitaxial planer transistor
Transistors with built-in Resistor UN4211/4212/4213/4214/4215/4216/4217/4218/ 4219/4210/421D/421E/421F/421K/421L Silicon NPN epitaxial planer transis.A1123 - Silicon PNP Transistor
Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 s Features q Sa.NCR18650PF - Lithium ion battery
Lithium Ion NCR18650PF Features & Benefits • High energy and power density • Long, stable, high power • High safety performance • Ideal for power ass.D1276 - 2SD1276
Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type darlington 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 For power.AQH2223 - Photo MOS Relays
4PMJE4UBUF3FMBZT "2)3&-":4 $PNQBDU%*1UZQF443*EFBMGPS"$MPBEDPOUSPM ķ 1 + 2 ķ 3 ķ ZC 4 ķ 8 1 + 2 ķ 6 3 ķ 5 4 Zero-cross ci.C4767 - 2SC4767
Productnnua 2.3±0.2 Transistor 2SC4767 Silicon NPN epitaxial planer type For high-frequency power amplification s Features q High transition frequenc.VVX32H101G00 - TFT LCD module
Global LCD Panel Exchange Center www.panelook.com DESCRIPTION The following specifications are applied to the following IPS-Pro-TFT LCD module. Pro.MIP2E2DMY - Silicon MOSFET
MIP2E2DMY MOS (IPD) ■ • • ■ • ■ Ta = 25°C ± 3°C VD 700 V VC 10 V ID 0.585 A IDP 0.82 A IC 0.1 A Tch 150 °C Tstg −55 ∼ +150 °C ■ • TO-220-A.AN7164 - 30 W BTL audio power amplifier
ICs for Audio Common Use AN7164 30 W BTL audio power amplifier s Overview The AN7164 is an integrated circuit designed for 30 W (VCC = 21 V, 8 Ω) out.AN-7523 - BTL Audio-Power
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .MIP9E01 - Power Units
High efficiency, reduced dimension and space for power circuits of household appliances Power Units with Built-in Non-insulated Power Supply IPD MIP9E.CGR17670HC - LITHIUM ION BATTERIES
LITHIUM ION BATTERIES: INDIVIDUAL DATA SHEET CGR17670HC CGR17670HC: Cylindrical Model Discharge Characteristics External Dimensions (mm) *2 17.0 .