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2SB1493 - PNP Transistor

Features

  • q Optimum for 60W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <.
  • 2.5V 20.0±0.3 19.0±0.3 15.0±0.2 4.0±0.1 15.0±0.5 13.0±0.5 10.5±0.5 Unit: mm 4.5±0.2 2.0±0.1 4.0±0.1 φ3.2±0.1 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector.

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Full PDF Text Transcription

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Power Transistors 2SB1493 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2255 s Features q Optimum for 60W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < –2.5V 20.0±0.3 19.0±0.3 15.0±0.2 4.0±0.1 15.0±0.5 13.0±0.5 10.5±0.5 Unit: mm 4.5±0.2 2.0±0.1 4.0±0.1 φ3.2±0.1 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC –160 –140 –5 –12 –7 70 2.
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