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2SB1623A - Silicon PNP epitaxial planar type Transistor

Features

  • r>.
  • High forward current transfer ratio hFE.
  • Satisfactory linearity of forward current transfer ratio hFE.
  • Dielectric breakdown voltage of the package: > 5 kV 15.0±0.5 φ 3.2±0.1 13.7±0.2 4.2±0.2 Solder Dip.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temper.

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Datasheet Details

Part number 2SB1623A
Manufacturer Panasonic
File Size 86.67 KB
Description Silicon PNP epitaxial planar type Transistor
Datasheet download datasheet 2SB1623A Datasheet

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Full PDF Text Transcription

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Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 ■ Features • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV 15.0±0.5 φ 3.2±0.1 13.7±0.2 4.2±0.2 Solder Dip ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature TC = 25°C Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −80 −80 −5 −4 −8 40 2.0 150 −55 to +150 °C °C Unit V V V A A W 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 0.55±0.15 2.54±0.30 5.
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