q High breakdown voltage, and high reliability through the use of a glass passivation layer
q High-speed switching q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
1700
V
Collector to emitter voltage
VCES
1700
V
VCEO
600
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
30
A
Collector current
IC
20
A
Base current
IB
10
A
Collector power TC=25°C
dissipation
Ta=25°C.
Full PDF Text Transcription for 2SC5413 (Reference)
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Power Transistors 2SC5413 Silicon NPN triple diffusion mesa type For horizontal deflection output s Features q High breakdown voltage, and high reliability through the us...
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Features q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage VCES 1700 V VCEO 600 V Emitter to base voltage VEBO 5 V Peak collector current ICP 30 A Collector current IC 20 A Base current IB 10 A Collector power TC=25°C dissipation Ta=25°C PC 200 W 3.
2SC5413 Datasheet