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2SK2276 - Silicon N-Channel MOS

Features

  • q Low 5.3±0.1 4.35±0.1 3.0±0.1 ON-resistance RDS(on) switching q High-speed 0.2max. 5.5±0.1 7.3±0.1 0.8max. 9.8±0.1 1.0±0.2 1.0±0.1 0.85±0.1 0.75±0.1 0.5±0.1 0.05 to 0.15 s Absolute Maximum Ratings (Tc = 25˚C) Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDP Tch Tstg.
  • 1 4.6±0.1 Rating 60 ±20 ±3 ±5 10 150.
  • 55 to +150 Unit V V A A W ˚C.

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Datasheet Details

Part number 2SK2276
Manufacturer Panasonic
File Size 34.65 KB
Description Silicon N-Channel MOS
Datasheet download datasheet 2SK2276 Datasheet
Additional preview pages of the 2SK2276 datasheet.

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Full PDF Text Transcription

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Power F-MOS FETs 2SK2276 2SK2276 Silicon N-Channel MOS For switching 6.5±0.1 1.8±0.1 2.5±0.1 Unit : mm s Features q Low 5.3±0.1 4.35±0.1 3.0±0.1 ON-resistance RDS(on) switching q High-speed 0.2max. 5.5±0.1 7.3±0.1 0.8max. 9.8±0.1 1.0±0.2 1.0±0.1 0.85±0.1 0.75±0.1 0.5±0.1 0.05 to 0.15 s Absolute Maximum Ratings (Tc = 25˚C) Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDP Tch Tstg *1 4.6±0.1 Rating 60 ±20 ±3 ±5 10 150 –55 to +150 Unit V V A A W ˚C ˚C G 1 2 3 Marking 2.3±0.
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