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This product complies with the RoHS Directive (EU 2002/95/EC).
Power MOSFETs
2SK3652
N-channel enhancement mode MOSFET
3.3±0.3Product lifecyclennuaen
■ Features • Low on-resistance, low Qg • High avalanche resistance
■ Applications • For PDP • For high-speed switching
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability *
VDSS VGSS
ID IDP EAS
230 ±30 50 200 2 200
V V A A mJ
Power dissipation
Junction temperature Storage temperature
Ta = 25°C
PD
Tj Tstg
100 3
150 −55 to +150
W
°C °C
Note) *: L = 1 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25°C
18.6±0.5stage.dc (2.0) Solder Dip
26.5±0.5e/
(2.0) (1.2) (10.0) (4.5) (23.4)
22.0±0.5
15.5±0.
2SK3652 Datasheet
