Low collector-emitter saturation voltage VCE(sat).
High-speed switching.
S-Mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Stora.
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2028
Silicon PNP epitaxial planar type
Productnnua to 0.1 0.9±0.1 0.9–+00..12
For DC-DC converter
■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • S-Mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO
IC ICP PC Tj Tstg
−20 −20 −5 −1 −3 150 150 −55 to +125
Unit V V V A A mW °C °C
1.25±0.