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Panasonic Electronic Components Datasheet

C2295 Datasheet

2SC2295

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C2295 pdf
Transistors
2SC2295
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1022
Features
Optimum for RF amplification of FM/AM radios
High transition frequency fT
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
www.DataSheept4acUk.cinogm
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
30
20
5
30
200
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol: V
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
0.1 µA
Forward current transfer ratio *
hFE VCB = 10 V, IE = −1 mA
70 220
Transition frequency
fT VCB = 10 V, IE = −1 mA, f = 200 MHz 150 250
MHz
Noise figure
NF VCB = 10 V, IE = −1 mA, f = 5 MHz
2.8 4.0
dB
Reverse transfer impedance
Zrb VCB = 10 V, IE = −1 mA, f = 2 MHz
22 50
Reverse transfer capacitance
(Common emitter)
Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz
0.9 1.5
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
B
C
hFE
70 to 140
110 to 220
Publication date: March 2003
SJC00112BED
1


Panasonic Electronic Components Datasheet

C2295 Datasheet

2SC2295

No Preview Available !

C2295 pdf
2SC2295
PC Ta
240
200
160
120
80
40
0
0 40 80 120 160
www.DataSheet4U.coAmmbient temperature Ta (°C)
IC VCE
12
Ta = 25°C
10 IB = 100 µA
8 80 µA
60 µA
6
4 40 µA
2 20 µA
0
0 6 12 18
Collector-emitter voltage VCE (V)
IC IB
15.0
VCE = 10 V
Ta = 25°C
12.5
10.0
7.5
5.0
2.5
0
0 20 40 60 80 100
Base current IB (µA)
IB VBE
120
VCE = 10 V
Ta = 25°C
100
80
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0
Base-emitter voltage VBE (V)
IC VBE
60
VCE = 10 V
50
25°C
40
Ta = 75°C
30
25°C
20
10
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE(sat) IC
100 IC / IB = 10
10
1
Ta = 75°C
25°C
0.1
25°C
0.01
0.1
1 10
Collector current IC (mA)
100
hFE IC
240
VCE = 10 V
200
160 Ta = 75°C
25°C
120
25°C
80
40
0
0.1 1 10 100
Collector current IC (mA)
fT IE
400
300
200
100
0
0.1
VCB = 10 V
f = 100 MHz
Ta = 25°C
1 10 100
Emitter current IE (mA)
Zrb IE
60 VCB = 10 V
f = 2 MHz
Ta = 25°C
50
40
30
20
10
0
0.1
1
Emitter current IE (mA)
10
2 SJC00112BED


Part Number C2295
Description 2SC2295
Maker Panasonic
Total Page 4 Pages
PDF Download
C2295 pdf
C2295 Datasheet PDF
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