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Panasonic Electronic Components Datasheet

C3311 Datasheet

2SC3311

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C3311 pdf
Transistors
2SC3311A
Silicon NPN epitaxial planar type
For low-frequency amplification
Complementary to 2SA1309A
Features
Optimum for high-density mounting
Allowing supply with the radial taping
www.DataSheetA4Ub.scomlute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
60
50
7
100
200
300
150
55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
4.0±0.2
2.0±0.2
Unit: mm
0.75 max.
0.45+–00..1200
(2.5) (2.5)
123
0.45+–00..1200
0.7±0.1
1: Emitter
2: Collector
3: Base
NS-B1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0
1 µA
Forward current transfer ratio *
hFE VCE = 10 V, IC = 2 mA
160 460
Collector-emitter saturation voltage
VCE(sat) IC = 100 mA, IB = 10 mA
0.1 0.3
V
Transition frequency
fT VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
3.5 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S No-rank
hFE 160 to 260 210 to 340 290 to 460 160 to 460
Product of no-rank is not classified and have no indication for rank.
Publication date: March 2003
SJC00127BED
1


Panasonic Electronic Components Datasheet

C3311 Datasheet

2SC3311

No Preview Available !

C3311 pdf
2SC3311A
PC Ta
500
400
300
200
100
0
0 40 80 120 160
www.DataSheet4U.coAmmbient temperature Ta (°C)
IC VCE
60
Ta = 25°C
50
IB = 160 µA
40
140 µA
120 µA
30
100 µA
20 80 µA
60 µA
10 40 µA
20 µA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC VBE
200
VCE = 10 V
160
120
25°C
80
Ta = 75°C
25°C
40
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE(sat) IC
100 IC / IB = 10
10
1
0.1 25°C Ta = 75°C
25°C
0.01
0.1
1 10
Collector current IC (mA)
100
hFE IC
600
VCE = 10 V
500
400 Ta = 75°C
25°C
300 25°C
200
100
0
0.1 1 10 100
Collector current IC (mA)
fT IE
300 VCE = 10 V
f = 100 MHz
250 Ta = 25°C
200
150
100
50
0
0.1
1
10 100
Emitter current IE (mA)
Cob VCB
10
IE = 0
f = 1 MHz
Ta = 25°C
8
6
4
2
0
1 10 100
Collector-base voltage VCB (V)
NV IC
240 VCE = 10 V
Function = FLAT
200 Ta = 25°C
160
120 Rg = 100 k
80
20 k
40 4.7 k
0
10 100 1 000
Collector current IC (µA)
2 SJC00127BED


Part Number C3311
Description 2SC3311
Maker Panasonic
Total Page 3 Pages
PDF Download
C3311 pdf
C3311 Datasheet PDF
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