q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCER VCEO VEBO ICP IC.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
C4152. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SC4152 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching s Features q High-speed switching q High collector to b...
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peed switching s Features q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCER VCEO VEBO ICP IC PC 1400 1400 700 5 1.0 0.3 20 2 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V V A A W ˚
C4152 Datasheet
