• Part: C5556
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 213.63 KB
Download C5556 Datasheet PDF
Panasonic
C5556
Features - Low noise figure NF 0.40+- 00..0150 3 0.16+- 00..0160 1.50- +00..0255 2.8- +00..32 - High transition frequency f T 0.4±0.2 - Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing (0.95) (0.95) 5˚ (0.65) 1.9±0.1 / - Absolute Maximum Ratings Ta = 25°C 2.90+- 00..0250 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO V c e. d ty Collector-emitter voltage (Base open) VCEO V n d stag tinue Emitter-base voltage (Collector open) VEBO 0 to 0.1 1.1- +00..12 1.1- +00..13 V a e cle con Collector current 80 m A lifecy , dis Collector power dissipation - PC 300 m W n u duct typed Junction temperature Tj °C te tin Pro ed Storage temperature Tstg - 55 to +150 °C four ntinu Note) - : Copper plate at the collector is more than 1 cm2 in area, 1.0 mm in thickness Marking Symbol: 3K 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1...