C5557 Overview
Transistor 2SC5557 Silicon NPN epitaxial planar type For low-noise RF amplifier 0.33+ 00..0025 Unit: mm 0.10+ 00..0025 3 0.15 min.
C5557 Key Features
- High transition frequency fT
- High gain of 8.2 dB and low noise of 1.8 dB at 3 V
- Optimum for RF amplification of a portable telephone and pager