C5517 Description
Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5.
C5517 Key Features
- High breakdown voltage, and high reliability through the use of a
- High-speed switching
- Wide area of safe operation (ASO)