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Power Transistors
2SC5505
Silicon NPN epitaxial planar type
For power amplification
9.9±0.3
Unit: mm 4.6±0.2
2.9±0.2
3.0±0.5
■ Features
• High-speed switching
φ 3.2±0.1
15.0±0.5
• TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
■ Absolute Maximum Ratings TC = 25°C
1.4±0.2 1.6±0.2
2.6±0.1
/ Parameter
Symbol Rating
Unit
0.8±0.1
0.55±0.15
e Collector-base voltage (Emitter open) VCBO
60
13.7±0.2 4.2±0.2
Solder Dip
V
pe) Collector-emitter voltage (Base open) VCEO
60
V
nc d ge. ed ty Emitter-base voltage (Collector open) VEBO
5
V
sta tinu Collector current
IC
8
A
a e cycle iscon Peak collector current
ICP
16
A
life d, d Collector power dissipation
PC
20
W
n u duct type Ta = 25°C
2.
C5505 Datasheet
